Cathay Advanced Materials Limited

1.) Metal sputtering target: Silver, Ag, Osmium, Os, Platinum, Pt, Palladium, Pd, Iridium, Ir, Ruthenium, Ru, Rhenium, Re, La, Ce, Pr, Nd, Sm, Eu, Gd

Used as a high brightness thermionic emission materials because of its low work function, high melting point and high metallic conductivity. Applic

Deposited by magnetron or other sputtering techniques, Indium Tin Oxide (ITO) target is used for the ITO coated substrates including electrodes for fl

Lanthanum ( Nitride, Chloride, Acetate, Oxalate, Carbonate, RARE EARTH: Lanthanum, Cerium, Praseodymium, Neodymium, Samarium, Europium, Gadolinium, Te

1.) Oxide sputtering target: La2O3, CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2

~Li3PO3 deposited as a solid electrolyte for thin film batteries. The film exhibits a single lithium-ion conductor with an ionic conductivity of at an

~Indium Gallium Zinc Oxide (IGZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular,

Zirconium Diboride (ZrB2) is semiconductor compounds that has a wide direct bandgap, which permits highly energetic electronic transitions to occur. S