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Personne àcontacter Mr. Tao
B6208, Jinbao Chuangye Jiayuan, Zhongkai High Technology Development Zone, HZ, Guangdong
~Indium Gallium Zinc Oxide (IGZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity and materials that are inexpensive and non-toxic, are the best candidates.
Serve as the raw materials for the sputter deposition of a variety
of thin films and coatings used in the microelectronic, flat panel
display, data storage, optical glass coating, and other industries,
the core process technologies used in coating material and target
manufacturing include:
Casting (vacuum or atmospheric), rolling, forging (hot / cold),
pressing (cold, hot, uniaxial or isotropic), sintering, spraying
(plasma, wire). CAM runs all these process technologies, including
cutting, milling, sawing, grinding, etc.
Purity: *8%, *9%, *9.5%, *9.9%, Purity: *8%, *9%, *9.5%, *9.9%,
*9.*5%, *9.*9%, *9.**9%
1.) Oxide sputtering target:
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3,
Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2
doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, Indium Tin Oxide, ITO
(In2O*-SnO2), ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide,
*0 wt% In2O3 / *0 wt% ZnO), Ga2O3 doped ZnO (GZO), IGZO,
La0.*7Sr0.*3MnO3 (LSMO), ZrO*-Y2O3 stabilized (YSZ), SnO2, Sb2O3
doped SnO2 (ATO), ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO,
MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, TiO*-Nb2O5, Ti2O3, Ti3O5,
CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3,
PbZrO3, LiNbO3, SrO, SrTiO3, SrZrO3, SrBaTiO3, PZT (Plumbum
Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3.
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2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide)
sputtering target
LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC
Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2,
MgF2
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, Nb5Si3, NbSi2, CrSi2, Cr3Si,
HfSi2, TiSi2, Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi,
CdS, ZnS, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, TaS2, WS2
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3.) Metal sputtering target:
Silver, Ag, Iridium, Ir, Ruthenium, Ru, La, Ce, Pr, Nd, Sm, Eu, Gd,
Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te,
Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb,
Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti,
Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium,
Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu,
Iron, Fe, Manganese, Mn, Magnesium, Mg.
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4.) Alloy sputtering target:
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr,
Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si,
Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb,
Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr,
Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni,
Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni,
Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe,
Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni,
Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu,
Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca,
Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr,
Mn-Fe, Mn-Ni, Mo-Cr, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu,
Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-V, Ni-V-Zr,
NiYb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe,
Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr,
Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co,
Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti,
V-Ti-Al, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-Ce,
Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y
EVAPORATION MATERIALS
La2O3, CeO2, Pr6O*1, Nd2O3, Sm2O3, Gd2O3, Dy2O3, Er2O3, Sm2O3,
Yb2O3, Y2O3, LaF3, CeF3, PrF3, NdF3, SmF3, GdF3, DyF3, ErF3, YbF3,
ScF3, YF3, HfO2, CaF2, ZnS, CdS, SiO2, HfO2, ZrO2, TiO2, TiO,
Ti2O3, Ti3O5, Ta2O5, Nb2O5, SiO2, Al2O3, MgO, ZnO, WO3, Bi2O3,
Sb2O3, Cr2O3, NiO, CuO, Fe2O3, V2O5, BaTiO3, SrTiO3, PrTiO3,
LaTiO3, MgF2, BaF2, SrF3, CaF2, KF, NaF, ZnS, CdS, ZnSe.
Specification of materials (custom composition, drawing and size
upon request):
1.) Foil, sheet, plate
Thickness: 0.*5mm min.
Length: ***0mm max.
Width: **0mm max.
2.) Disc, wafer
Thickness: 0.*5mm min.
Diameter: **0mm max.
3.) Powder
From **0, **0, ***5, ***5 to ****0 mesh
4.) Granule or pellet
Diameter:1mm**0mm
5.) Wire:
Diameter: 0.1mm min.
Length: according to customer's requirements.
6.) Rod
Diameter: 1.0mm**0mm
Length: ***0mm max.
| Pays: | China |
| N ° de modèle: | - |
| Prix FOB: | Obtenir le dernier prix |
| Localité: | - |
| Prix de commande minimale: | - |
| Commande minimale: | - |
| Packaging Detail: | - |
| Heure de livraison: | - |
| Capacité de Fournir: | - |
| Payment Type: | - |
| Groupe de produits : | - |
