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Personne àcontacter Mr. Tao
B6208, Jinbao Chuangye Jiayuan, Zhongkai High Technology Development Zone, HZ, Guangdong
Zirconium Diboride (ZrB2) is semiconductor compounds that has a wide direct bandgap, which permits highly energetic electronic transitions to occur. Such electronic transitions can result in group III nitride materials having a number of attractive properties including the ability to efficiently emit blue and ultraviolet light, the ability to transmit signals at high frequency, it applied in many semiconductor device a, including microelectronic devices such as transistors, and optoelectronic devices such as laser diodes and light emitting diodes (LEDs).
1.) Oxide sputtering target:
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3,
Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2
doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, Indium Tin Oxide, ITO
(In2O*-SnO2), ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide,
*0 wt% In2O3 / *0 wt% ZnO), Ga2O3 doped ZnO (GZO), IGZO,
La0.*7Sr0.*3MnO3 (LSMO), ZrO*-Y2O3 stabilized (YSZ), SnO2, Sb2O3
doped SnO2 (ATO), ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO,
MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, TiO*-Nb2O5, Ti2O3, Ti3O5,
CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3,
PbZrO3, LiNbO3, SrO, SrTiO3, SrZrO3, SrBaTiO3, PZT (Plumbum
Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3.
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2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide)
sputtering target
LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC
Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2,
MgF2
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, Nb5Si3, NbSi2, CrSi2, Cr3Si,
HfSi2, TiSi2, Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi,
CdS, ZnS, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, TaS2, WS2
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3.) Metal sputtering target:
Silver, Ag, Iridium, Ir, Ruthenium, Ru, La, Ce, Pr, Nd, Sm, Eu, Gd,
Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te,
Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb,
Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti,
Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium,
Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu,
Iron, Fe, Manganese, Mn, Magnesium, Mg.
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4.) Alloy sputtering target:
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr,
Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si,
Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb,
Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr,
Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni,
Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni,
Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe,
Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni,
Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu,
Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca,
Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr,
Mn-Fe, Mn-Ni, Mo-Cr, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu,
Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-V, Ni-V-Zr,
NiYb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe,
Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr,
Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co,
Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti,
V-Ti-Al, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-Ce,
Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y
EVAPORATION MATERIALS
La2O3, CeO2, Pr6O*1, Nd2O3, Sm2O3, Gd2O3, Dy2O3, Er2O3, Sm2O3,
Yb2O3, Y2O3, LaF3, CeF3, PrF3, NdF3, SmF3, GdF3, DyF3, ErF3, YbF3,
ScF3, YF3, HfO2, CaF2, ZnS, CdS, SiO2, HfO2, ZrO2, TiO2, TiO,
Ti2O3, Ti3O5, Ta2O5, Nb2O5, SiO2, Al2O3, MgO, ZnO, WO3, Bi2O3,
Sb2O3, Cr2O3, NiO, CuO, Fe2O3, V2O5, BaTiO3, SrTiO3, PrTiO3,
LaTiO3, MgF2, BaF2, SrF3, CaF2, KF, NaF, ZnS, CdS, ZnSe.
Specification of materials (custom composition, drawing and size
upon request):
1.) Foil, sheet, plate
Thickness: 0.*5mm min.
Length: ***0mm max.
Width: **0mm max.
2.) Disc, wafer
Thickness: 0.*5mm min.
Diameter: **0mm max.
3.) Powder
From **0, **0, ***5, ***5 to ****0 mesh
4.) Granule or pellet
Diameter:1mm**0mm
5.) Wire:
Diameter: 0.1mm min.
Length: according to customer's requirements.
6.) Rod
Diameter: 1.0mm**0mm
Length: ***0mm max.
| Pays: | China |
| N ° de modèle: | - |
| Prix FOB: | Obtenir le dernier prix |
| Localité: | - |
| Prix de commande minimale: | - |
| Commande minimale: | - |
| Packaging Detail: | - |
| Heure de livraison: | - |
| Capacité de Fournir: | - |
| Payment Type: | - |
| Groupe de produits : | - |
