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19B hangdu mansion huafu road futian district,Shenzhen,Guangdong,China China
The QPA4501 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applictions up yo 3W RMS at the device output covering frequency
Product Description: Model No. :PH2856-160 Instock: 150 units Features NPN Silicon Microwave Power Transistor Common Base Configuration Cl
Product Description Model No. :SC667665MMMR Brand: Original Min. working Temperature: -10 Max. working Temperature : 90 Min. Voltage: 4V Max
Model No. : SD2933-02 MKS Power PCB Brand: ST In Stock: 300 pcs Features: Gold metallization Excellent Thermal Stability Common source configuration
Model No. :MD7IC2755NR1 Brand: Freescale NXP In stock 2000 pcs Features: Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for
PRODUCT DESCRIPTION The TCC3100(SD1456) is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for hig
Product Description: Model No.:UF2810P Inctock: 200 units Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances f
Product Descrition: The RF Line Microwave Pulse Power Transistor isdesigned for 10251150 MHz pulse common base amplifier applications such as TCAS, TA
Product Description The RF MOSFET Line RF Power Field-Effect Transistor(NChannel EnhancementMode)MRF134is designed for wideband largesignal amplifier
Model No.:VRF**1 Brand: APT In stock **0 pcs Features: **0w with *4dB Typical *@********************th *2dB Typical Gain
Product Description Model No. :SC667670 Brand: Original Min. working Temperature: -40 Max. working Temperature : 125 Min. Voltage: 2V Max. V
DESCRIPTION The FLM3135-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50
Model No.:MRFX600HS Brand: Original In stock: 200 Features: Unmatched input and output allowing wide frequency range utilization Output impedan
Product Descriprtion: Model No.MRF7S38075HS / MRF7S38075HR3 / MRF7S38075HSR3 Designed for WiMAX base station applications with frequencies up to 3800
Product Descriprtion: Model No.MRFE6S9160HSR3 / MRFE6S9160HR3 / MRFE6S9160HS Designed for N-CDMA, GSM and GSM EDGE base station applications with freq
General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Model NO. :BLF7G22LS-25
Product Description: This 107W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequen
Product:Microwave RF tubes Model: BLF188XR condition: New GOLD METALLIZATION Ceramic encapsulation High efficiency Easy power control integrated E
Product Details: Brand: Microsemi Product Name: RF power Mosfet tubes Model Number: ARF1510 Votage: 400V Power:750w Frequency: 40MHz Gain:17dB (Class
Model No. : 8705109C Name:High Power RF Tubes Brand: APT Max. working temperature: 125 min. working temperature: -10 Max. Voltage: 7.5V Min.
Product Description: Model Number:AE 87000099A RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Product Pin
Product Descrpition: Product Brand: APT Model No.:MS2280 Instock: 300 units Packaging: High frequency tube Product Category: Electronic Components M
Product Description Model No.:MS2502W Instock: 1500 units RF POWER TRANSISTOR Packaging:High Frequency Tubes Min. working temperature: -10 Max
Model No. : FLL357ME L357 Description : The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies w
Model No. :TIM7785-60SL Brand: TOSHIBA Product Name: Microwave RF transister Description: Input Voltage Range: 30V to 60V (65V Abs. Max.) Wide Output
Model No.:S-AV32 Brand: TOSHIBA In Stock: 200 pcs FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL VHF RADIO APPLICATIONS Power Gain: 30.7 dB (M
Personne àcontacter Mr. Yuanlong Jiang
Nom de la société 19B hangdu mansion huafu road futian district, Shenzhen, Guangdong
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