FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET By Shenzhen Yuanlong Microwave Electronics Co., Ltd.,
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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET

Prix FOB

Obtenir le dernier prix

45 ~ 50 USD / Piece

|

10 Piece Minimum Order

Pays:

China

N ° de modèle:

FLL357ME

Prix FOB:

45 ~ 50 USD / Piece Obtenir le dernier prix

Localité:

Shenzhen China

Prix de commande minimale:

45 per Piece

Commande minimale:

10 Piece

Packaging Detail:

Vaccum plastic Pack

Heure de livraison:

7 days FOB Shenzhen

Capacité de Fournir:

1000 Piece per Month

Payment Type:

T/T, Western Union, PayPal

Groupe de produits :

IC

Contacter maintenant
Shenzhen Yuanlong Microwave Electronics Co., Ltd.

Shenzhen Yuanlong Microwave Electronics Co., Ltd.

China

Membre gratuit

Personne à contacter Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

Contacter maintenant

La description

Model No. :    FLL357ME   L357

Description : The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Features   
High Output Power: P1dB=35.5dBm (Typ.)
High Gain: G1dB=11.5dB (Typ.)
High PAE: ηadd=46% (Typ.)
Proven Reliability
Hermetically Sealed Package
Brand : Fujitsu
image

Pays: China
N ° de modèle: FLL357ME
Prix FOB: 45 ~ 50 / Piece Obtenir le dernier prix
Localité: Shenzhen China
Prix de commande minimale: 45 per Piece
Commande minimale: 10 Piece
Packaging Detail: Vaccum plastic Pack
Heure de livraison: 7 days FOB Shenzhen
Capacité de Fournir: 1000 Piece per Month
Payment Type: T/T, Western Union, PayPal
Groupe de produits : IC

Mots-clés correspondants Shenzhen Yuanlong Microwave Electronics Co., Ltd.

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Mots-clés correspondants

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Mr. Yuanlong < Shenzhen Yuanlong Microwave Electronics Co., Ltd. >

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