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South Africa
Personne àcontacter general
Pretoria, Gauteng
| Item | IC grade monocrystalline silicon ingot | |
| Size | *0"**6" | |
| Growth method | CZ | |
| Diameter | ******0mm | |
| Orientation | <**0> | |
| Type | N-type / P-type | |
| Dopant | P-type:Boron | |
| N-type:Phos. | ||
| Purity | *1N(*9.********9%) | |
| Oxygen Content | ≤*8 New PPMA | |
| Carborn Content | ≤1 New PPMA | |
| Resistivity | ≥0.**1Ω•cm | |
