Power Tranistor, Mosfet, Schottky Diode, Igbt, Overvoltage Protection Device, Scr.thyristor Surge Suppresser From Jilin Sino-Microelectronics Co., Ltd.

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Personne Ã contacter Mr. dannis dai

Nom de la sociÃ©tÃ© NO.99 SHENZHEN ST. JILIN CIY ILIN PROVINCE CHINA, Shenzhen, Guangdong

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Schottky Rectifiers (hbr10100-TO-220)

Part number: MBR10100 PACKAGE: TO-220/ TO-220HF/ TO-263 Specification parameter IF(AV) Vrrm(V) VF(V) IR ( A) Ifsm(A) 5X2 100 0.83 10 100 Packing list

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Power Transistor for High Voltage Battery Charger (3DG3020)

Part number: 3DG3020 PACKAGE: TO-92 Specification parameter IC(A) PC(W) BVcbo(V) BVceo(V) Hfe 1.51 800 450 30-40 Packing list Ammo pack Inner box siz

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Silicon Control Rectifiers for Thyristor (3CT2A-T0-126)

Part number: 3CT2A PACKAGE: TO-126 Specification parameter It(AV) Igt( A) Vdrm(V) Vrrm Vtm (V) 2A 10-140 500 500 1.7 Packing list Tube pack Tube size

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Power mosfet transistor (JCS7N65CB)

Part number: JCS7N65CB PACKAGE: TO-220C Specification parameter ID VDss VGss VGS(th) RDSON ( ) 7A 650 30 2~4 1.3 Packing list Tube pack Tube size(mm

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Silicon Control Rectifier for Triacs (3FT4M/C/F/U-TO-126)

Part number: 3FT4M PACKAGE: TO-126/TO-220C/TO-220HF/TO-252/DPAK Specification parameter It(RMS) Igt(mA) Vdrm(V) Vtm (V) 4A

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IGBT Module (JT020N120WCD-TO-247)

Part number: JT020N120WCD PACKAGE: TO-247 Specification parameter IC(A) Vces Vcesat Vge(th) 15A >1200V

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Thyristor Surge Suppresser for Camera (P0080TA-SMB)

Part number: P0080TA PACKAGE: SMB Specification parameter IPP VDRM VBO VT C IH (A)10/1000 (V) (V) (V) (pF)2V 1MHz (mA) 60 6 15 4 50 100 Packing list

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Quick Recovery Rectifiers (8f60c)

Part number: 8f60c PACKAGE: TO-220C2L Specification parameter IF(AV) Vrrm(V) VF(V) IR ( A) Trr(ns) 8 600 1.8 50 45 Packing list Tube pack Tube size(m

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Power Transistor for Power Supplies (BU406)

Part number: BU406 PACKAGE: TO-220C Specification parameter IC(A) PC(W) Vcbo(V) Vceo(V) hFE 7 60 400 200 60-80 Packing list Tube pack Tube size(mm)

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Jilin Sino-Microelectronics Co., Ltd.

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