ULTRA LOW POWER CMOS STATIC RAM

La description

The ISSI IS*2WV***8ALL / IS*2WV***8BLL are  high-
speed, 2M bit static RAMs organized as **6K words by 8
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
 
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable s. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS*2WV***8ALL and IS*2WV***8BLL are packaged
in the JEDEC standard **-pin TSOP (TYPE I), sTSOP
(TYPE I), and **-pin mini BGA.

FEATURES
• High-speed access time:  *5ns, *0ns
• CMOS low power operation
– *6 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.*5V**2.2V VCC (*2WV***8ALL)
– 2.5V**3.6V VCC (*2WV***8BLL)
• Fully static operation: no clock or refresh required
 Three state outputs
 Industrial temperature available
 Lead-free available