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MMBTA94 High Voltage Transistor
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Personne àcontacter Ms. Sandra
Unit B 11 /F., Eton Building No 288 Des Voeux Road Central, HongKong, HongKong
MMBTA*4 Epitaxial Planar Die Construction Complementary NPN Type Available Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO ***0 V Collector-Base Voltage VCBO ***0 V Emitter-Base Voltage VEBO *7 V Collector Current Ic ***0 mA Device Dissipation PD **5 mW Junction and Storage Temperature TJ, Tstg **5to***5 Degree ELECTRICAL CHARACTERISTICS TA=*5Degree unless otherwise noted Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) V(BR)CEO ***0 — V Collector-Base Breakdown Voltage (IC=**0µA, IE=0) V(BR)CBO ***0 __ V Emitter-Base Breakdown Voltage (IE= **0µA , IC=0) V(BR)EBO *7 — V Collector Cutoff Current (VCB=**0VIE=0) ICBO __ ***0 nA DC Current Gain (Ic=*0mA, VCE=*0.0V) HFE *0 **0 — Collector-Emitter Saturation Voltage (Ic=**0mA, IB=*0mA) VCE(sat) — *0.6 V Current-Gain-Bandwidth Product (Ic=*0mA, VCE=*0V, f=*0MHz) fT *0 __ MHz DEVICE MARKING GMA*4(MMBTA*4)=4D
| Pays: | China |
| N ° de modèle: | MMBTA94 High Voltage Transistor |
| Prix FOB: | Obtenir le dernier prix |
| Localité: | - |
| Prix de commande minimale: | - |
| Commande minimale: | - |
| Packaging Detail: | - |
| Heure de livraison: | - |
| Capacité de Fournir: | - |
| Payment Type: | - |
| Groupe de produits : | - |
