Prix FOB
Obtenir le dernier prix|
30000 Pack/Packs Minimum Order
Pays:
China
N ° de modèle:
MMBTA44 High Voltage Transistor
Prix FOB:
Localité:
-
Prix de commande minimale:
-
Commande minimale:
30000 Pack/Packs
Packaging Detail:
-
Heure de livraison:
-
Capacité de Fournir:
-
Payment Type:
-
Groupe de produits :
-
Personne à contacter Ms. Sandra
Unit B 11 /F., Eton Building No 288 Des Voeux Road Central, HongKong, HongKong
MMBTA*4 Epitaxial Planar Die Construction Complementary NPN Type Available Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO **0 V Collector-Base Voltage VCBO **0 V Emitter-Base Voltage VEBO 7 V Collector Current Ic **0 mA Device Dissipation PD **5 mW Junction and Storage Temperature TJ, Tstg **5to***5 Degree ELECTRICAL CHARACTERISTICS TA=*5Degree unless otherwise noted Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC=1mA, IB=0) V(BR)CEO **0 — V Collector-Base Breakdown Voltage (IC=**0?A, IE=0) V(BR)CBO **0 __ V Emitter-Base Breakdown Voltage (IE= **0?A , IC=0) V(BR)EBO 7 — V Collector Cutoff Current (VCB=**0VIE=0) ICBO __ **0 nA DC Current Gain (Ic=*0mA, VCE=*0.0V) HFE *0 **0 — Collector-Emitter Saturation Voltage (Ic=**0mA, IB=*0mA) VCE(sat) — 0.5 V Current-Gain-Bandwidth Product (Ic=*0mA, VCE=*0V, f=*0MHz) fT *0 __ MHz DEVICE MARKING GMA*4(MMBTA*4)=3D
| Pays: | China |
| N ° de modèle: | MMBTA44 High Voltage Transistor |
| Prix FOB: | Obtenir le dernier prix |
| Localité: | - |
| Prix de commande minimale: | - |
| Commande minimale: | 30000 Pack/Packs |
| Packaging Detail: | - |
| Heure de livraison: | - |
| Capacité de Fournir: | - |
| Payment Type: | - |
| Groupe de produits : | - |
