Description
*4M x 8 Bits NAND Flash Memory
FEATURES
• Voltage SupplyÂ
  - 1.8V Device(K9F***8R0C) : 1.*5V ~ 1.*5V
  - 2.7V Device(K9F***8B0C) : 2.5V ~ 2.9V
  - 3.3V Device(K9F***8U0C) : 2.7V ~ 3.6V
• Organization
 - Memory Cell Array : (*4M + 2M)  x 8bits
 - Data Register : (**2 + *6)  x
 8bits
• Automatic Program and Erase
 - Page Program : (**2 + *6) x  8bits
 - Block Erase : (*6K + **2)Bytes
• Page Read Operation
 - Page Size : (**2 + *6)Bytes
 - Random Access    :
*5µs(Max.)
 - Serial Page Access : *2ns(Min.)
• Fast Write Cycle Time
 - Program time : **0µs(Typ.)
 - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
 - Program/Erase Lockout During Power Transitions
*4M x 8 Bits NAND Flash Memory
• Reliable CMOS Floating-Gate Technology
 - Endurance    : **0K
Program/Erase Cycles
      Â
       (with
1bit/**2Byte ECC)
 - Data Retention : *0 Years
• Command Register Operation
• Unique ID for Copyright Protection
• PackageÂ
 - K9F***8U0C-PCB0/PIB0 : Pb-Free Package
  *8 - Pin TSOP I (*2 x *0 / 0.5 mm pitch)
 - K9F***8X0C-JCB0/JIB0: Pb-Free Package
  **-Ball FBGA(8.5 x *3 x 1.2mmt)
 - K9F***8B0C-PCB0/PIB0 : Pb-Free Packag
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