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Personne àcontacter Mr. TRACY
NO588,KANGZHUANG SOUTH ROAD,JIANGBEI, NINGBO, ZHEJIANG
Wafer Specification Crystal type : Monocrystalline Crowth method : CZ Type : p-type, Boron doped Diagonale : **0 mm Diameter Tolerance : +/*0.5mm Form : pseudo square, profiled edges (round) Size : **5x**5 mm Dimensional Tolerance for p.s.: +/- 0.5mm Thickness, Î&frac*4;m : **0 Centre Thickness Tolerance, Î&frac*4;m : +/**0 TTV, Î&frac*4;m : <*0 Bow, Î&frac*4;m : <*0 Surface Saw Damage Depth, Î&frac*4;m : < *5 Saw Traces, Î&frac*4;m : < 5 Resistivity : 0, **3, 0 ohm Orientation : <**0> +/*3° Life Time :> *0 microsec Crystal quality : dislocation free C-content : < 2x***7 atoms/cm3 O-content : < 1x***8 atoms/cm3