Prix FOB
Obtenir le dernier prix750 ~ 750 / ( Negotiable )
|10 Piece Minimum Order
Pays:
China
N ° de modèle:
-
Prix FOB:
750 ~ 750 / ( Negotiable ) Obtenir le dernier prix
Localité:
-
Prix de commande minimale:
750
Commande minimale:
10 Piece
Packaging Detail:
-
Heure de livraison:
-
Capacité de Fournir:
-
Payment Type:
T/T, Other
Groupe de produits :
-
Personne àcontacter alex
Jinhua, Zhejiang
Crees CGHV****0F2 is a gallium nitride (GaN) High Electron Mobility
Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET
offers excellent power added efficiency in comparison to other
technologies. GaN
has superior properties compared to silicon or gallium arsenide,
including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal
conductivity. GaN HEMTs also offer greater power density and wider
bandwidths
compared to GaAs transistors. This IM FET is available in a
metal/ceramic flanged
package for optimal electrical and thermal performance.
| Parameter | 8.4 GHz | 8.8GHz | 9.0GHz | 9.2GHz | 9.4GHz | 9.6GHz | units |
| linear power | *2.7 | *2.4 | *2.7 | *3.1 | *3.1 | *2.4 | dB |
| output power | **1 | **7 | **0 | **2 | **0 | **1 | W |
| power gain | *0.8 | *0.6 | *0.7 | *0.7 | *0.5 | *0.2 | dB |
| power added efficiency | *4 | *2 | *4 | *3 | *5 | *5 | % |
| Features | Application |
| 8.**9.6 GHz Operation | Marine Radar |
| **5WPOUT typical | Weather Monitoring |
| *0dB Power Gain | Air Traffic Control |
| *5% Typical PAE | Maritime Vessel Traffic Control |
| *0 Ohm Internally Matched | Port Security |
| <0.3 dB Power Droop | Â |
| Pays: | China |
| N ° de modèle: | - |
| Prix FOB: | 750 ~ 750 / ( Negotiable ) Obtenir le dernier prix |
| Localité: | - |
| Prix de commande minimale: | 750 |
| Commande minimale: | 10 Piece |
| Packaging Detail: | - |
| Heure de livraison: | - |
| Capacité de Fournir: | - |
| Payment Type: | T/T, Other |
| Groupe de produits : | - |
