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Si7617DN-T1-GE3

Prix FOB

Obtenir le dernier prix

( Negotiable )

1 Minimum Order

Pays:

China

N Â° de modÃ¨le:

Prix FOB:

( Negotiable )(Negotiable) Obtenir le dernier prix

LocalitÃ©:

China

Prix de commande minimale:

Commande minimale:

Packaging Detail:

box, etc

Heure de livraison:

3 to 7 days

Capacité de Fournir:

18000 Piece

Payment Type:

Groupe de produits :

Mosfet

Contacter maintenant

Shenzhen Keweilian Electronics Co., Ltd

China

200 Points de confiance

1st Année

Personne Ã contacter Mr. Sam

Futian street, Shekou, Guangdong

Contacter maintenant

SpÃ©cification du produit

Brand Name: Vishay

La description

Package / Case PowerPAK******8

Transistor Polarity P-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage *0 V

Id - Continuous Drain Current *5 A

Rds On - Drain-Source Resistance *2.3 mOhms

Vgs - Gate-Source Voltage - *5 V, + *5 V

Vgs th - Gate-Source Threshold Voltage 1.2 V

Qg - Gate Charge *9 nC

Pd - Power Dissipation *2 W

Brand Vishay Semiconductors

Configuration Single

Fall Time 9 ns, *1 ns

Forward Transconductance - Min *5 S

Product Type MOSFET

Rise Time 9 ns, *3 ns

Typical Turn-Off Delay Time *0 ns, *2 ns

Typical Turn-On Delay Time *1 ns, *0 ns

Pays:	China
N Â° de modÃ¨le:	-
Prix FOB:	( Negotiable ) (Negotiable) Obtenir le dernier prix
LocalitÃ©:	China
Prix de commande minimale:	-
Commande minimale:	1
Packaging Detail:	box, etc
Heure de livraison:	3 to 7 days
Capacité de Fournir:	18000 Piece
Payment Type:	-
Groupe de produits :	Mosfet