Part Number : FP*5R*2KT4 Voltage ***0V Configuration PIM Housing EconoPIM 2 SIKEYUE specializes in branded products such as Infineon, Hitachi Energy ABB , PI, LITEON, Grandsemi, Lcor...

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    IGBT power module is a power module composed ofInsulatedGateBipolar Transistors IGBTs .IGBT power module is a semiconductor power module that integrates IGBT and driver circuits. It can conve...

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    The Semicorex SiC Coated Graphite Barrel Susceptor is the perfect choice for semiconductor manufacturing applications that require exceptional heat distribution and thermal conductivity. Its high-p...
    Product Description Model No. : SC*****5MMMR Brand: Original Min. working Temperature: **0 Max. working Temperature : *0 Min. Voltage: 4V Max. Voltage: 6.5V LOT: PS***7 Usage: Automotive chi......
    Product Description Model No. : SC*****0 Brand: Original Min. working Temperature: **0 Max. working Temperature : **5 Min. Voltage: 2V Max. Voltage: 8.5V Usage: Automotive chips Origin count......
    Model No. FLL**0MK Description L-Band Medium High Power GaAs Features : High Output Power: P1dB *6.0dBm Typ. High Gain: G1dB *1.5dB Typ. ...
    Model No.: MRFX**0HS Brand: Original In stock: **0 Features: Unmatched input and output allowing wide frequency range utilization Output impedance fits a 4:1 transformer Device can be ...
    Model No.: TIM******5SL***1 Brand: Original In Stock: *0 pcs First come, first served Features: Low Intermodulation Distortion IM3 **5 dBc at Pout *5.5 dBm Single Carrier Level Hi...
    Product Descriprtion: Model No. MRF7S****5HS / MRF7S****5HR3 / MRF7S****5HSR3 Designed for WiMAX base station applications with frequencies up to ***0 MHz. Suitable for WiMAX, WiBro, BWA, and ...
    Product Descriprtion: Model No. MRFE6S***0HSR3 / MRFE6S***0HR3 / MRFE6S***0HS Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from **5 to **0 MHz. Suitab...
    Product Description The MW7IC***0N wideband integrated circuit is designed with on-chip matching that makes it usable from ***5 to ***0 MHz. This multi-stage structure is rated for *4 to *2 Volt op...
    Model No.: VRF**1 Brand: APT In stock **0 pcs Features: **0w with *4dB Typical Gain **5MHz , *0V **0w with *2dB Typical Gain *0MHz , *0V Excellent Stability Low IMD Common Source conf...
    Model No. : SD******2 MKS Power PCB Brand: ST In Stock: **0 pcs Features: Gold metallization Excellent Thermal Stability Common source configuration Pout **0W min. with *0 dB Gain *0 MHz 2pcs of ...
    Model No. : MD7IC***5NR1 Brand: Freescale NXP In stock ***0 pcs Features: Production Tested in a Symmetrical Doherty Configuration **0 PAR Tested for Guaranteed Output Power Capability Charac...
    Model No.: ARF***0 Brand: APT The ARF***0 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line **0V operation in high power scientific, medical and, indus...
    Model No.: FMM***6VF RF Power Amplifier PCB Brand: Eudyna Fujitsu In stock:***0 pcs Features: High Output Power: *4.0dBm typ. High Liner Gain: *8.0dB typ. Low VSWR Broard Band: 5....
    AE AE*******9 B AE*******9 AE RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Model No. : AE*******9 Brand:...
    Product: Microwave RF tubes Model: BLF**8XR condition: New GOLD METALLIZATION Ceramic encapsulation High efficiency Easy power control integrated ESD protection Excellent thermal stabil...
    Product Details: Brand: Microsemi Product Name: RF power Mosfet tubes Model Number: ARF***0 Votage: **0V Power:**0w Frequency: *0MHz Gain: *7dB Class D Feature: High Performance Powe...
    Model No. : FLL**7ME L**7 Description : The FLL**1ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and...
    Model No. : ******9C Name: High Power RF Tubes Brand: APT Max. working temperature: **5 min. working temperature: **0 Max. Voltage: 7.5V Min. Voltage: 4.5V Length: 2.4MM Width: 1.6mm height:......
    Model No. : TIM******0SL Brand: TOSHIBA Product Name: Microwave RF transister Description: Input Voltage Range: *0V to *0V *5V Abs. Max. Wide Output Voltage: 4.5V to *8V Vout Vin/2 *7...
    Product Description: Model Number:AE *******9A RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Product Pins: AE Pinnacle Usage: nbs...
    DESCRIPTION The FLM******8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a *0 ohm system. Eudynas stringent Quality As...
    The QPA***1 is an integrated *-stage Power Amplifier Module designed for massive MIMO applictions up yo 3W RMS at the device output covering frequency range from 4.4 to 5, 0 GHz. The module is *0 ...
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