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Personne àcontacter Allen
China, Shenzhen, Guangdong
 Cypress semiconductor inc. launched **-and **-Mbit fast
Mbit asynchronous SRAM, and create a precedent industry. New SRAM
device in such a high density and have a very fast response time
and minimize the encapsulation of the size. Target application
fields including storage server, switches and routers, test
equipment, high-end security systems and military system.
 CY7C***1DV*3 **-Mbit 3 V and CY7C***1DV*3 **-Mbit 3 V fast
SRAM asynchronous provide **-bit and *-bit I/O configuration. New
**-Mbit and **-Mbit SRAM visit to *2 ns. The device with **-BGA
RoHS standard packaging way, size were 8.0 x 9.5 x 1.2 mm and 8.0 x
9.5 x 1.4 mm, this is the same storage density of the smallest size
device. New fast SRAM asynchronous in a cypress high performance of
the *0 nm C9 CMOS technology production. Cypress is fast SRAM
asynchronous and low power consumption of the industry leaders, its
product line storage density range from four to *4 Kbit Mbit
range.
 Cypress asynchronous storage division director Sunil
Thamaran said: "mini ****4 Mbit fast SRAM Mbit and the publication
of, effectively proved our SRAM business to perform commitment. We
constantly seeks to use deep sub-micron technology and design
innovation as the market with the next generation of high
performance SRAM."
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