Prix FOB
Obtenir le dernier prix9 USD / Piece
|10 Piece Minimum Order
Pays:
China
N ° de modèle:
IS61LV51216-10MLI
Prix FOB:
9 USD / Piece Obtenir le dernier prix
Localité:
-
Prix de commande minimale:
9 per Piece
Commande minimale:
10 Piece
Packaging Detail:
-
Heure de livraison:
1DAY
Capacité de Fournir:
5600 Piece per Day
Payment Type:
T/T
Groupe de produits :
Personne àcontacter David
Shenzhen, Guangdong
The ISSI IS*1/*4LV****6 is a high-speed, 8M-bit static
RAM organized as **5,**8 words by *6 bits. It is fabricated
using ISSI's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable s, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS*1/*4LV****6 is packaged in the JEDEC standard
**-pin TSOP Type II and **-pin Mini BGA (9mm x *1mm).
Pays: | China |
N ° de modèle: | IS61LV51216-10MLI |
Prix FOB: | 9 / Piece Obtenir le dernier prix |
Localité: | - |
Prix de commande minimale: | 9 per Piece |
Commande minimale: | 10 Piece |
Packaging Detail: | - |
Heure de livraison: | 1DAY |
Capacité de Fournir: | 5600 Piece per Day |
Payment Type: | T/T |
Groupe de produits : | SRAM MEMORY |