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RF Power Field-Effect Transistor

Prix FOB

Obtenir le dernier prix

( Negotiable )

1 Piece Minimum Order

Pays:

China

N Â° de modÃ¨le:

MRF151G

Prix FOB:

( Negotiable )(Negotiable) Obtenir le dernier prix

LocalitÃ©:

ShenZhen Of China

Prix de commande minimale:

Commande minimale:

1 Piece

Packaging Detail:

Heure de livraison:

1-2 Business Days

Capacité de Fournir:

1000 Piece per Day

Payment Type:

Western Union, T/T

Groupe de produits :

Contacter maintenant

Novelty Electronics Limited

China

Membre gratuit

Personne Ã contacter Mr. Allen

Sungang West Rd Rd, Shenzhen, Guangdong

Contacter maintenant

La description

The RF MOSFET Line

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to **5 MHz.The high power, high gain and broadband performance of this device makes possible solid state transmitters

The high power, high gain and broadband performance of this

device makes possible solid state transmitters for FM broadcast or TV channel

frequency bands.

• Guaranteed Performance at **5 MHz, *0 V:

Output Power — **0 W

Gain — *4 dB (*6 dB Typ)

Efficiency — *0%

• Low Thermal Resistance — 0.*5°C/W

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

Pays:	China
N Â° de modÃ¨le:	MRF151G
Prix FOB:	( Negotiable ) (Negotiable) Obtenir le dernier prix
LocalitÃ©:	ShenZhen Of China
Prix de commande minimale:	-
Commande minimale:	1 Piece
Packaging Detail:	-
Heure de livraison:	1-2 Business Days
Capacité de Fournir:	1000 Piece per Day
Payment Type:	Western Union, T/T
Groupe de produits :	-