AIN wafer

La description

The aluminum nitride (AlN) ceramic has high thermal conductivity(***0 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields. Special spec products can be produced upon requests.

Polished ceramic substrate: Our AlN  substrate can be polished(single and double polish) by the advanced machine which imported from abroad. Ceramic substrate surface roughness can reach to less than 0.**5um without porous after being polished. It is perfectly suitable for the device application of small spec, high precision , wiring density and  good stability.

Laser processing service: Through laser machine scribing, cutting, and drilling, we can process AlN substrate with high accuracy and absolute consistency upon customer’s request.

Regular specification of AIN wafer                                    
Square pieces
Thickness: 0.**5mm/0.5mm/0.**5mm/1mm                
Length/wide: *0.8mm/*6.2mm/**1.6mm/**4.3mm                
Round pieces
Thickness: 1mm, 1.2mm, 1.5mm, 2mm, 2.5mm            
Diameter: *6/*9mm, *0/*6mm, *0/*5mm, *0/*5mm, *0/*2mm, *0mm, *5mm, *0mm