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Personne àcontacter Mr. Wang
Shanghai, Shanghai
2inch /3inch 4inch /5inch  C-axis/ a-axis/  r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness
| GENERAL | |||||
| Chemical Formula | Â | Al2O3 | |||
| Crystal Stucture | Â | Hexagonal System ((hk o 1) | |||
| Unit Cell Dimension | Â | a=4.758 , c=12.991 , c:a=2.730 | |||
| PHYSICAL | |||||
|  |  | Metric     | English (Imperial) | ||
| Density | Â | 3.98 g/cc | 0.144 lb/in3 | ||
| Hardness |  | 1525 - 2000 Knoop, 9 mhos       | 3700° F | ||
| Melting Point |  | 2310 K (2040° C) |  | ||
| STRUCTURAL | |||||
| Tensile Strength | Â | 275 MPa to 400 MPa | 40,000 to 58,000 psi | ||
|  | at 20° | 400 MPa | 58,000 psi (design min.) | ||
|  | at 500° C | 275 MPa | 40,000 psi (design min.) | ||
|  | at 1000° C      | 355 MPa | 52,000 psi (design min.) | ||
| Flexural Stength           |  | 480 MPa to 895 MPa | 70,000 to 130,000 psi | ||
| Compression Strength | Â | 2.0 GPa (ultimate) | 300,000 psi (ultimate) Â Â Â Â
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The Kyropoulos process (KY
process) for sapphire crystal growth is currently used by many
companies in China to produce sapphire for the electronics and
optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100
degrees Celsius. Typically the crucible is made of tungsten or
molybdenum. A precisely oriented seed crystal is dipped into the
molten alumina. The seed crystal is slowly pulled upwards and may
be rotated simultaneously. By precisely controlling the temperature
gradients, rate of pulling and rate of temperature decrease, it is
possible to produce a large, single-crystal, roughly cylindrical
ingot from the melt.
After single crystal sapphire boules are grown, they are
core-drilled into cylindrical rods, The rods are sliced up into the
desired window thickness and finally polished to the desired
surface finish.
| Pays: | China |
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