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Personne àcontacter Mr. Wang
Shanghai, Shanghai
2inch /3inch 4inch /5inch  C-axis/ a-axis/  r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness
| GENERAL | |||||
| Chemical Formula | Â | Al2O3 | |||
| Crystal Stucture | Â | Hexagonal System ((hk o 1) | |||
| Unit Cell Dimension | Â | a=4.758 , c=12.991 , c:a=2.730 | |||
| PHYSICAL | |||||
|  |  | Metric     | English (Imperial) | ||
| Density | Â | 3.98 g/cc | 0.144 lb/in3 | ||
| Hardness |  | 1525 - 2000 Knoop, 9 mhos       | 3700° F | ||
| Melting Point |  | 2310 K (2040° C) |  | ||
| STRUCTURAL | |||||
| Tensile Strength | Â | 275 MPa to 400 MPa | 40,000 to 58,000 psi | ||
|  | at 20° | 400 MPa | 58,000 psi (design min.) | ||
|  | at 500° C | 275 MPa | 40,000 psi (design min.) | ||
|  | at 1000° C      | 355 MPa | 52,000 psi (design min.) | ||
| Flexural Stength           |  | 480 MPa to 895 MPa | 70,000 to 130,000 psi | ||
| Compression Strength | Â | 2.0 GPa (ultimate) |
300,000 psi (ultimate) Â Â Â Â Â
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The Kyropoulos process (KY process) for sapphire crystal growth
is currently used by many companies in China to produce
sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over
2100 degrees Celsius. Typically the crucible is made of
tungsten or molybdenum. A precisely oriented seed crystal is
dipped into the molten alumina. The seed crystal is slowly
pulled upwards and may be rotated simultaneously. By precisely
controlling the temperature gradients, rate of pulling and rate
of temperature decrease, it is possible to produce a large,
single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are
core-drilled into cylindrical rods, The rods are sliced up into
the desired window thickness and finally polished to the
desired surface finish.
| Pays: | China |
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